Roadmap on atomic-scale semiconductor devices

SR Schofield; A J Fisher; E Ginossar; JW Lyding; R Silver; F Fei; P Namboodiri; J Wyrick; MG Masteghin; DC Cox; BN Murdin; SK Clowes; J G Keizer; M Y Simmons; HG Stemp; A Morello; B Voisin; S Rogge; R A Wolkow; L Livadaru; J Pitters; T J Z Stock; N J Curson; RE Butera; T V Pavlova; AM Jakob; D Spemann; P Räcke; F Schmidt-Kaler; DN Jamieson; U Pratiush; G Duscher; S V Kalinin; D Kazazis; P Constantinou; G Aeppli; Y Ekinci; JHG Owen; E Fowler; SOR Moheimani; J Randall; S Misra; J A Ivie; CR Allemang; EM Anderson; E Bussmann; Q Campbell; X Gao; TM Lu; SW Schmucker

Journal article

Roadmap on atomic-scale semiconductor devices

SR Schofield, A J Fisher, E Ginossar, JW Lyding, R Silver, F Fei, P Namboodiri, J Wyrick, MG Masteghin, DC Cox, BN Murdin, SK Clowes, J G Keizer, M Y Simmons, HG Stemp, A Morello, B Voisin, S Rogge, R A Wolkow, L Livadaru Show all

Nano Futures | IOP Publishing | Published : 2025

DOI: 10.1088/2399-1984/ada901

Abstract

Spin states in semiconductors provide exceptionally stable and noise-resistant environments for qubits, positioning them as optimal candidates for reliable quantum computing technologies. The proposal to use nuclear and electronic spins of donor atoms in silicon, introduced by Kane in 1998, sparked a new research field focused on the precise positioning of individual impurity atoms for quantum devices, utilising scanning tunnelling microscopy and ion implantation. This roadmap article reviews the advancements in the 25 years since Kane’s proposal, the current challenges, and the future directions in atomic-scale semiconductor device fabrication and measurement. It covers the quest to create ..

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